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Power semiconductor devices, spanning blocking voltages from a few volts to tens of thousands of volts, are critical for efficient energy conversion in numerous applications and serve as key enablers of carbon neutrality. These devices can be realized in either vertical or lateral architectures, with the former preferred for high-power discrete devices and the latter offering high switching speeds and monolithic circuit integration. While lateral structures have long been utilized in low- and medium-voltage applications, recent advancements in multidimensional device architectures and (ultra-)wide-bandgap semiconductor materials have revitalized their potential for high-voltage applications. Multidimensional architectures, such as superjunction and multichannel designs, enable uniform electric field distribution for voltage scaling and, at the same time, boost carrier concentrations to enhance current capacity. The application of these architectures in gallium nitride and gallium oxide has led to the demonstration of multi-kilovolt lateral devices with diverse designs, achieving breakdown voltages exceeding 10 000 V, average electric fields up to 4.7 MV/cm, high-temperature operation up to 250 °C, and specific on-resistances at least 2–3 times lower than similarly rated vertical devices. Such advantages can be further enhanced through the implementation of monolithic bidirectional devices, a unique capability of the lateral architecture that enables the replacement of four vertical devices. This review provides an overview of multidimensional high-voltage lateral devices, emphasizing their fundamental device physics to inspire further applications across various material systems. The theoretical performance limits of multidimensional lateral devices are also analyzed. In addition, we discuss critical knowledge gaps that must be addressed for industrial adoption, highlighting emerging research opportunities in this rapidly evolving field. 

The ultraviolet (UV) photodissociation dynamics of the 1-methylallyl (1-MA) radical were studied using the high-n Rydberg atom time-of-flight (HRTOF) technique in the wavelength region of 226–244 nm. The 1-MA radicals were produced by 193 nm photodissociation of the 3-chloro-1-butene and 1-chloro-2-butene precursor. The 1 + 1 REMPI spectrum of 1-MA agrees with the previous UV absorption spectrum in this wavelength region. Quantum chemistry calculations show that the UV absorption is mainly attributed to the 3pz Rydberg state (perpendicular to the allyl plane). The H atom photofragment yield (PFY) spectrum of 1-MA from 3-chloro-1-butene displays a broad peak around 230 nm, while that from 1-chloro-2-butene peaks at ∼236 nm. The translational energy distributions of the H atom loss product channel, P (ET)’s, show a bimodal distribution indicating two dissociation pathways in 1-MA. The major pathway is isotropic in product angular distribution with β ∼ 0 and has a low fraction of average translational energy in the total excess energy, ⟨fT⟩, in the range of 0.13–0.17; this pathway corresponds to unimolecular dissociation of 1-MA after internal conversion to form 1,3-butadiene + H. The minor pathway is anisotropic with β ∼ −0.23 and has a large ⟨fT⟩ of ∼0.62–0.72. This fast pathway suggests a direct dissociation of the methyl H atom on a repulsive excited state surface or the repulsive part of the ground state surface to form 1,3-butadiene + H. The fast/slow pathway branching ratio is in the range of 0.03–0.08. 

Ultraviolet photodissociation dynamics of 2-methylallyl radical from the 3p Rydberg state were investigated in the wavelength region of 226–244 nm using the high-n Rydberg atom time-of-flight (HRTOF) technique. The 2-methylallyl radicals were generated by 193 nm photolysis of 3-chloro-2-methyl-1-propene precursors. The photofragment yield spectrum of H-atom products increases in intensity with decreasing wavelengths in 226–244 nm. The TOF spectra of H-atom products show a bimodal structure. The predominant product channel (with ∼98% branching ratio) has a kinetic energy release peaking at ∼7 kcal/mol, with an average ratio of ET in the total available energy, (fT), of ∼0.18 in 226–244 nm and an isotropic product angular distribution. At the low ET, isotropic component is from statistical unimolecular decomposition of highly vibrationally excited hot 2-methylallyl to the methylenecyclopropane+H products, following internal conversion from the excited electronic state. The minor product channel (with ∼2% branching ratio) has a large kinetic energy peaking at ∼50 kcal/mol, with (fT)≈0.63 and an anisotropic angular distribution (β≈−0.2). At the high ET, anisotropic component is non-statistical and is postulated to be from direct loss of H atom via the 3p Rydberg state or repulsive part of the ground state to the 1,3-butadiene+H products. 

Photo-predissociation of rovibrational levels of SH (A2Σ+, v′ = 0–6) is studied using the high-n Rydberg atom time-of-flight technique. Spin–orbit branching fractions of the S(3PJ=2,1,0) products are measured in the product translational energy distributions. The SH A2Σ+v′ = 0 state predissociates predominantly via coupling to the 4Σ− repulsive state. As the vibrational level v′ increases, predissociation dynamics change drastically, with all three repulsive states (4Σ−, 2Σ−, and 4Π) involved in the dissociation. Nonadiabatic interactions and quantum interferences among these dissociation pathways affect the fine-structure state distributions of the S(3PJ=2,1,0) products. 

Abstract Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward power electronics applications. Recently, reports on large-area (ampere-class) Ga 2 O 3 power devices have emerged globally, and the scope of these works have gone well beyond the bare-die device demonstration into the device packaging, circuit testing, and ruggedness evaluation. These results have placed Ga 2 O 3 in a unique position as the only ultra-wide bandgap semiconductor reaching these indispensable milestones for power device development. This paper presents a timely review on the state-of-the-art of the ampere-class Ga 2 O 3 power devices (current up to >100 A and voltage up to >2000 V), including their static electrical performance, switching characteristics, packaging and thermal management, and the overcurrent/overvoltage ruggedness and reliability. Exciting research opportunities and critical technological gaps are also discussed.